Component information
FN4A4P-T1B-A
Renesas Electronics Corporation FN4A4P-T1B-A: Single, Pre-Biased Bipolar Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SC-59.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Active
- Resistor - Emitter Base (R2)
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 95 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Transistor Type
- PNP - Pre-Biased
- Power - Max
- 200 mW
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 10 kOhms
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SC-59
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ