Component information
FP75R12KT4B11BOSA1
Infineon Technologies FP75R12KT4B11BOSA1: IGBT Modules. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 1 mA
- Input Capacitance (Cies) @ Vce
- 4.3 nF @ 25 V
- Input
- Standard
- NTC Thermistor
- Yes
- IGBT Type
- Trench Field Stop
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Configuration
- Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Current - Collector (Ic) (Max)
- 75 A
- Power - Max
- 385 W
- Vce(on) (Max) @ Vge, Ic
- 2.15V @ 15V, 75A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Tray
- Base Product Number
- FP75R12
Documentation and references
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