Component information
FQB12P20TM
FQB12P20TM component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 40 nC @ 10 V
- Series
- QFET®
- Vgs (Max)
- ±30V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1200 pF @ 25 V
- Part Status
- Active
- Power Dissipation (Max)
- 3.13W (Ta), 120W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 200 V
- Supplier Device Package
- TO-263 (D2PAK)
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Tc)
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- FQB12P20
- Rds On (Max) @ Id, Vgs
- 470mOhm @ 5.75A, 10V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ