Component information
FQT1N80TF-WS
FQT1N80TF-WS component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 7.2 nC @ 10 V
- Series
- QFET®
- Vgs (Max)
- ±30V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 195 pF @ 25 V
- Part Status
- Active
- Power Dissipation (Max)
- 2.1W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 800 V
- Supplier Device Package
- SOT-223-3
- Current - Continuous Drain (Id) @ 25°C
- 200mA (Tc)
- Package / Case
- TO-261-3
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- FQT1N80
- Rds On (Max) @ Id, Vgs
- 20Ohm @ 100mA, 10V
Documentation and references
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