Component information
FQU2N50BTU-WS
FQU2N50BTU-WS component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3.7V @ 250µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 8 nC @ 10 V
- Series
- QFET®
- Vgs (Max)
- ±30V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 230 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 2.5W (Ta), 30W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 500 V
- Supplier Device Package
- IPAK
- Current - Continuous Drain (Id) @ 25°C
- 1.6A (Tc)
- Package / Case
- TO-251-3 Short Leads, IPAK, TO-251AA
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- FQU2N50
- Rds On (Max) @ Id, Vgs
- 5.3Ohm @ 800mA, 10V
Documentation and references
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