Component information
FZ800R45KL3B5NOSA2
Infineon Technologies FZ800R45KL3B5NOSA2: IGBT Modules. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 5 mA
- Input Capacitance (Cies) @ Vce
- 3.1 nF @ 25 V
- Input
- Standard
- NTC Thermistor
- No
- IGBT Type
- Trench Field Stop
- Operating Temperature
- -50°C ~ 125°C
- Configuration
- Dual, Parallel
- Voltage - Collector Emitter Breakdown (Max)
- 4500 V
- Current - Collector (Ic) (Max)
- 1600 A
- Power - Max
- 9000 W
- Vce(on) (Max) @ Vge, Ic
- 2.85V @ 15V, 800A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Tray
- Base Product Number
- FZ800R45
Documentation and references
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