Component information
G2K2P10S2E
Goford Semiconductor G2K2P10S2E: FET, MOSFET Arrays. Package / Case: 8-SOIC (0.154", 3.90mm Width). Supplier Device Package: 8-SOP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Goford Semiconductor
- Series
- TrenchFET®
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1623pF @ 50V
- Power - Max
- 3.1W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Configuration
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 3.5A (Tc)
- Rds On (Max) @ Id, Vgs
- 200mOhm @ 3A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SOP
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- G2K2P
Documentation and references
Documentation can be discussed with your inquiry.
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