Component information
G3F05MT12GB2-T
Navitas Semiconductor, Inc. G3F05MT12GB2-T: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: SiCPAK G.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Navitas Semiconductor, Inc.
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.3V @ 140mA
- Gate Charge (Qg) (Max) @ Vgs
- 784nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 19700pF @ 800V
- Power - Max
- 444W (Tc)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 216A (Tc)
- Rds On (Max) @ Id, Vgs
- 6.2mOhm @ 180A, 18V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- SiCPAK G
- Packaging
- Tray
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ