Component information
G3F09MT12FB2-T
Navitas Semiconductor, Inc. G3F09MT12FB2-T: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: SiCPAK F.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Navitas Semiconductor, Inc.
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.3V @ 70mA
- Gate Charge (Qg) (Max) @ Vgs
- 392nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 9850pF @ 800V
- Power - Max
- 238W (Tc)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 109A (Tc)
- Rds On (Max) @ Id, Vgs
- 12.5mOhm @ 90A, 18V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- SiCPAK F
- Packaging
- Tray
Documentation and references
Documentation can be discussed with your inquiry.
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