Component information
G3F18MT12K
Navitas Semiconductor, Inc. G3F18MT12K: Single FETs, MOSFETs. Package / Case: TO-247-4. Supplier Device Package: TO-247-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Navitas Semiconductor, Inc.
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 212 nC @ 18 V
- Vgs (Max)
- +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds
- 4962 pF @ 800 V
- Power Dissipation (Max)
- 441W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 1200 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 111A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 45A, 18V
- Vgs(th) (Max) @ Id
- 4.3V @ 35mA
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-4
- Package / Case
- TO-247-4
- Packaging
- Tube
Documentation and references
Documentation can be discussed with your inquiry.
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