Component information
G3R30MT12K
Navitas Semiconductor, Inc. G3R30MT12K: Single FETs, MOSFETs. Package / Case: TO-247-4. Supplier Device Package: TO-247-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Navitas Semiconductor, Inc.
- Series
- G3R™
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.69V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs
- 155 nC @ 15 V
- Vgs (Max)
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds
- 3901 pF @ 800 V
- Power Dissipation (Max)
- 400W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Rds On (Max) @ Id, Vgs
- 36mOhm @ 50A, 15V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-4
- Package / Case
- TO-247-4
- Packaging
- Tube
- Base Product Number
- G3R30
Documentation and references
Documentation can be discussed with your inquiry.
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