Component information
GAN039-650NTBJ
Nexperia USA Inc. GAN039-650NTBJ: Single FETs, MOSFETs. Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad. Supplier Device Package: CCPAK1212i.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Nexperia USA Inc.
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 26 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1980 pF @ 400 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 250W (Ta)
- Technology
- GaNFET (Gallium Nitride)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 58.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 39mOhm @ 32A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- CCPAK1212i
- Package / Case
- 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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