GAN080-650EBEZ

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Nexperia USA Inc.

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 30.7mA

Gate Charge (Qg) (Max) @ Vgs

6.2 nC @ 6 V

Vgs (Max)

+7V, -6V

Input Capacitance (Ciss) (Max) @ Vds

225 pF @ 400 V

FET Type

N-Channel

Power Dissipation (Max)

240W (Tc)

Technology

GaNFET (Gallium Nitride)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V

Rds On (Max) @ Id, Vgs

80mOhm @ 8A, 6V

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

DFN8080-8

Package / Case

8-VDFN Exposed Pad

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

GAN080