GAN111-650WSBQ

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Nexperia USA Inc.

Part Status

Active

Vgs(th) (Max) @ Id

4.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4.9 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

336 pF @ 400 V

FET Type

N-Channel

Power Dissipation (Max)

107W (Ta)

Technology

GaNFET (Gallium Nitride)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

114mOhm @ 14A, 10V

Mounting Type

Through Hole

Supplier Device Package

TO-247-3L

Package / Case

TO-247-3

Packaging

Tube