GAN3R2-100CBEAZ

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Nexperia USA Inc.

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 9mA

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 5 V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1000 pF @ 50 V

FET Type

N-Channel

Power Dissipation (Max)

394W

Technology

GaNFET (Gallium Nitride)

Operating Temperature

-40°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

60A

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 25A, 5V

Mounting Type

Surface Mount

Supplier Device Package

8-WLCSP (3.5x2.13)

Package / Case

8-XFBGA, WLCSP

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

GAN3R2