GAN7R0-150LBEZ

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Nexperia USA Inc.

Part Status

Active

Vgs(th) (Max) @ Id

2.1V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

7.6 nC @ 5 V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

865 pF @ 85 V

FET Type

N-Channel

Power Dissipation (Max)

28W

Technology

GaNFET (Gallium Nitride)

Operating Temperature

-40°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

150 V

Current - Continuous Drain (Id) @ 25°C

28A

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

7mOhm @ 10A, 5V

Mounting Type

Surface Mount

Supplier Device Package

3-FCLGA (3.2x2.2)

Package / Case

3-VLGA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

GAN7R0