Component information
GANE350-650FBAZ
Nexperia USA Inc. GANE350-650FBAZ: Single FETs, MOSFETs. Package / Case: 8-PowerVDFN. Supplier Device Package: DFN5060-5.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Nexperia USA Inc.
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.5V @ 6.6mA
- Gate Charge (Qg) (Max) @ Vgs
- 1.5 nC @ 6 V
- Vgs (Max)
- +7V, -1.4V
- Input Capacitance (Ciss) (Max) @ Vds
- 50 pF @ 400 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 65W (Tc)
- Technology
- GaNFET (Gallium Nitride)
- Operating Temperature
- -55°C ~ 150°C
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V
- Rds On (Max) @ Id, Vgs
- 350mOhm @ 2.2A, 6V
- Mounting Type
- Surface Mount, Wettable Flank
- Supplier Device Package
- DFN5060-5
- Package / Case
- 8-PowerVDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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