Component information
GCMS1P4B120S4B1-N
SemiQ GCMS1P4B120S4B1-N: FET, MOSFET Arrays. Package / Case: Module. Series: QSiC™.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- SemiQ
- Series
- QSiC™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 2.3mOhm @ 500A, 18V
- Vgs(th) (Max) @ Id
- 4V @ 200mA
- Gate Charge (Qg) (Max) @ Vgs
- 2595nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 84000pF @ 800V
- Power - Max
- 2618W (Tc)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 1.013kA (Tc)
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Packaging
- Box
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ