Component information
GCMX010A120B3H1P
SemiQ GCMX010A120B3H1P: FET, MOSFET Arrays. Package / Case: Module. Series: QSiC™.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- SemiQ
- Series
- QSiC™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id
- 4V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs
- 428nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds
- 10900pF @ 800V
- Power - Max
- 600W (Tc)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Configuration
- 4 N-Channel (Full Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 201A (Tc)
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Packaging
- Box
Documentation and references
Documentation can be discussed with your inquiry.
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