Component information
GE12160CEA3
GE Aerospace GE12160CEA3: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- GE Aerospace
- Series
- SiC Power
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.5V @ 480mA
- Gate Charge (Qg) (Max) @ Vgs
- 3744nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 90000pF @ 600V
- Power - Max
- 3750W
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- Silicon Carbide (SiC)
- Qualification
- AEC-Q101
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 1.425kA (Tc)
- Rds On (Max) @ Id, Vgs
- 1.5mOhm @ 475A, 20V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Bulk
- Base Product Number
- GE12160
Documentation and references
Documentation can be discussed with your inquiry.
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