Component information
GE17042BCA3
GE Aerospace GE17042BCA3: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- GE Aerospace
- Series
- SiC Power
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.5V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs
- 1207nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 29100pF @ 900V
- Power - Max
- 1250W
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- Silicon Carbide (SiC)
- Qualification
- AEC-Q101
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C
- 425A (Tc)
- Rds On (Max) @ Id, Vgs
- 4.45mOhm @ 425A, 20V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Bulk
- Base Product Number
- GE17042
Documentation and references
Documentation can be discussed with your inquiry.
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