Component information
GP3T016A120H
SemiQ GP3T016A120H: Single FETs, MOSFETs. Package / Case: TO-247-4. Supplier Device Package: TO-247-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- SemiQ
- Series
- QSiC™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id
- 4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs
- 260 nC @ 18 V
- Vgs (Max)
- +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds
- 6779 pF @ 1000 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 484W (Tc)
- Technology
- SiCFET (Silicon Carbide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-4
- Package / Case
- TO-247-4
- Packaging
- Tube
Documentation and references
Documentation can be discussed with your inquiry.
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