Component information
GT50N322A
Toshiba Semiconductor and Storage GT50N322A: Single IGBTs. Package / Case: TO-3P-3, SC-65-3. Supplier Device Package: TO-3P(N).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- Power - Max
- 156 W
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 800 ns
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 1000 V
- Current - Collector (Ic) (Max)
- 50 A
- Current - Collector Pulsed (Icm)
- 120 A
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 60A
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Supplier Device Package
- TO-3P(N)
- Packaging
- Tray
Documentation and references
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