Component information
HAT1069C-EL-E
HAT1069C-EL-E component information and product attributes.
Product information
- Manufacturer
- Renesas Electronics Corporation
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA
- Mfr
- Renesas Electronics Corporation
- Gate Charge (Qg) (Max) @ Vgs
- 16 nC @ 4.5 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±8V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 1380 pF @ 10 V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 900mW (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C
- Drain to Source Voltage (Vdss)
- 12 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Supplier Device Package
- 6-CMFPAK
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Package / Case
- 6-SMD, Flat Leads
- Rds On (Max) @ Id, Vgs
- 52mOhm @ 1.5A, 4.5V
Documentation and references
Documentation can be discussed with your inquiry.
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