Component information
HAT2166H-EL-E
HAT2166H-EL-E component information and product attributes.
Product information
- Manufacturer
- Renesas Electronics Corporation
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Mfr
- Renesas Electronics Corporation
- Gate Charge (Qg) (Max) @ Vgs
- 27 nC @ 4.5 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 4400 pF @ 10 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 25W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 30 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 45A (Ta)
- Supplier Device Package
- LFPAK
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- SC-100, SOT-669
- Rds On (Max) @ Id, Vgs
- 3.8mOhm @ 22.5A, 10V
- Base Product Number
- HAT2166
Documentation and references
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