Component information
HFA3127R
Renesas Electronics Corporation HFA3127R: Bipolar RF Transistors. Package / Case: 16-VFQFN Exposed Pad. Supplier Device Package: 16-QFN (3x3).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Obsolete
- Power - Max
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 10mA, 2V
- Current - Collector (Ic) (Max)
- 65mA
- Operating Temperature
- 175°C (TJ)
- Transistor Type
- 5 NPN
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 8GHz
- Noise Figure (dB Typ @ f)
- 3.5dB @ 1GHz
- Mounting Type
- Surface Mount
- Package / Case
- 16-VFQFN Exposed Pad
- Supplier Device Package
- 16-QFN (3x3)
- Packaging
- Tube
- Base Product Number
- HFA3127
Documentation and references
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