Component information
HGT1S10N120BNST
onsemi HGT1S10N120BNST: Single IGBTs. Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. Supplier Device Package: TO-263 (D2PAK).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- onsemi
- Part Status
- Active
- Switching Energy
- 320µJ (on), 800µJ (off)
- Input Type
- Standard
- Gate Charge
- 100 nC
- Td (on/off) @ 25°C
- 23ns/165ns
- IGBT Type
- NPT
- Test Condition
- 960V, 10A, 10Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 35 A
- Current - Collector Pulsed (Icm)
- 80 A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A
- Power - Max
- 298 W
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263 (D2PAK)
- Packaging
- Cut Tape (CT)
- Base Product Number
- HGT1S10
Documentation and references
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