Component information
HGT1S3N60A4DS9A
onsemi HGT1S3N60A4DS9A: Single IGBTs. Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. Supplier Device Package: TO-263 (D2PAK).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- onsemi
- Part Status
- Obsolete
- Input Type
- Standard
- Gate Charge
- 21 nC
- Td (on/off) @ 25°C
- 6ns/73ns
- Test Condition
- 390V, 3A, 50Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Reverse Recovery Time (trr)
- 29 ns
- Current - Collector (Ic) (Max)
- 17 A
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector Pulsed (Icm)
- 40 A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 3A
- Power - Max
- 70 W
- Switching Energy
- 37µJ (on), 25µJ (off)
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263 (D2PAK)
- Packaging
- Tube
- Base Product Number
- HGT1S3N60
Documentation and references
Documentation can be discussed with your inquiry.
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