Component information
HGTD1N120BNS9A
HGTD1N120BNS9A component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Switching Energy
- 70µJ (on), 90µJ (off)
- Manufacturer
- onsemi
- Input Type
- Standard
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Gate Charge
- 14 nC
- Part Status
- Active
- Td (on/off) @ 25°C
- 15ns/67ns
- IGBT Type
- NPT
- Test Condition
- 960V, 1A, 82Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 5.3 A
- Mounting Type
- Surface Mount
- Current - Collector Pulsed (Icm)
- 6 A
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vce(on) (Max) @ Vge, Ic
- 2.9V @ 15V, 1A
- Supplier Device Package
- TO-252AA
- Power - Max
- 60 W
- Base Product Number
- HGTD1N120
Documentation and references
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