Component information
HGTP10N120BN
HGTP10N120BN component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Switching Energy
- 320µJ (on), 800µJ (off)
- Manufacturer
- onsemi
- Input Type
- Standard
- Packaging
- Tube
- Gate Charge
- 100 nC
- Part Status
- Obsolete
- Td (on/off) @ 25°C
- 23ns/165ns
- IGBT Type
- NPT
- Test Condition
- 960V, 10A, 10Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 35 A
- Mounting Type
- Through Hole
- Current - Collector Pulsed (Icm)
- 80 A
- Package / Case
- TO-220-3
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A
- Supplier Device Package
- TO-220-3
- Power - Max
- 298 W
- Base Product Number
- HGTP10
Documentation and references
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