Component information
HGTP2N120CN
onsemi HGTP2N120CN: Single IGBTs. Package / Case: TO-220-3. Supplier Device Package: TO-220-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- onsemi
- Part Status
- Obsolete
- Switching Energy
- 96µJ (on), 355µJ (off)
- Input Type
- Standard
- Gate Charge
- 30 nC
- Td (on/off) @ 25°C
- 25ns/205ns
- IGBT Type
- NPT
- Test Condition
- 960V, 2.6A, 51Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 13 A
- Current - Collector Pulsed (Icm)
- 20 A
- Vce(on) (Max) @ Vge, Ic
- 2.4V @ 15V, 2.6A
- Power - Max
- 104 W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Packaging
- Tube
- Base Product Number
- HGTP2N120
Documentation and references
Documentation can be discussed with your inquiry.
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