Component information
HN1B01FDW1T1
HN1B01FDW1T1 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Current - Collector Cutoff (Max)
- 2µA
- Manufacturer
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Packaging
- Tape & Reel (TR)
- Power - Max
- 380mW
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 200mA
- Package / Case
- SC-74, SOT-457
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- SC-74
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Base Product Number
- HN1B01
Documentation and references
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