Component information
HN1B04FE-GR,LXHF
Toshiba Semiconductor and Storage HN1B04FE-GR,LXHF: Bipolar Transistor Arrays. Package / Case: SOT-563, SOT-666. Supplier Device Package: ES6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- Power - Max
- 100mW
- Frequency - Transition
- 80MHz
- Operating Temperature
- 150°C (TJ)
- Grade
- Automotive
- Transistor Type
- 1 NPN, 1 PNP
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 150mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- ES6
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- HN1B04
Documentation and references
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