Component information
HN1C01FYTE85LF
Toshiba Semiconductor and Storage HN1C01FYTE85LF: Bipolar Transistor Arrays. Package / Case: SC-74, SOT-457. Supplier Device Package: SM6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 2mA, 6V
- Power - Max
- 300mW
- Frequency - Transition
- 80MHz
- Operating Temperature
- 125°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Current - Collector (Ic) (Max)
- 150mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Supplier Device Package
- SM6
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- HN1C01
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ