Component information
HN3C10FUTE85LF
Toshiba Semiconductor and Storage HN3C10FUTE85LF: Bipolar RF Transistors. Package / Case: 6-TSSOP, SC-88, SOT-363. Supplier Device Package: US6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- Gain
- 11.5dB
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 20mA, 10V
- Current - Collector (Ic) (Max)
- 80mA
- Transistor Type
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 7GHz
- Noise Figure (dB Typ @ f)
- 1.1dB @ 1GHz
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- US6
- Packaging
- Tape & Reel (TR)
- Base Product Number
- HN3C10
Documentation and references
Documentation can be discussed with your inquiry.
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