Component information
HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage HN3C51F-GR(TE85L,F: Bipolar Transistor Arrays. Package / Case: SC-74, SOT-457. Supplier Device Package: SM6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Power - Max
- 300mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 120V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Supplier Device Package
- SM6
- Packaging
- Tape & Reel (TR)
- Base Product Number
- HN3C51
Documentation and references
Documentation can be discussed with your inquiry.
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