Component information
HN4A51JTE85LF
Toshiba Semiconductor and Storage HN4A51JTE85LF: Bipolar Transistor Arrays. Package / Case: SC-74A, SOT-753. Supplier Device Package: SMV.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Power - Max
- 300mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 2 PNP (Dual)
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 120V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- SC-74A, SOT-753
- Supplier Device Package
- SMV
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- HN4A51
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ