Component information
HN4B04J(TE85L,F)
Toshiba Semiconductor and Storage HN4B04J(TE85L,F): Bipolar Transistor Arrays. Package / Case: SC-74A, SOT-753. Supplier Device Package: SMV.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 100mA, 1V
- Power - Max
- 300mW
- Frequency - Transition
- 200MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max)
- 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 30V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)
- 100µA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- SC-74A, SOT-753
- Supplier Device Package
- SMV
- Packaging
- Tape & Reel (TR)
- Base Product Number
- HN4B04
Documentation and references
Documentation can be discussed with your inquiry.
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