Component information
HN4B102J(TE85L,F)
Toshiba Semiconductor and Storage HN4B102J(TE85L,F): Bipolar Transistor Arrays. Package / Case: SC-74A, SOT-753. Supplier Device Package: SMV.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 200mA, 2V
- Power - Max
- 750mW
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max)
- 1.8A, 2A
- Voltage - Collector Emitter Breakdown (Max)
- 30V
- Vce Saturation (Max) @ Ib, Ic
- 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
- Mounting Type
- Surface Mount
- Package / Case
- SC-74A, SOT-753
- Supplier Device Package
- SMV
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- HN4B102
Documentation and references
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