Component information
HP8JB5TB1
Rohm Semiconductor HP8JB5TB1: FET, MOSFET Arrays. Package / Case: 8-PowerTDFN. Supplier Device Package: 8-HSOP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Rohm Semiconductor
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 920pF @ 20V
- Power - Max
- 3W (Ta), 21W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 7A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs
- 44mOhm @ 7A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Supplier Device Package
- 8-HSOP
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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