HP8KB6TB1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

10.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 20V

Power - Max

3W (Ta), 21W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta), 24A (Tc)

Rds On (Max) @ Id, Vgs

15.7mOhm @ 10.5A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-HSOP

Packaging

Tape & Reel (TR); Cut Tape (CT)