HP8M31TB1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.3nC @ 10V, 38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 30V, 2300pF @ 30V

Power - Max

3W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

N and P-Channel

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta)

Rds On (Max) @ Id, Vgs

65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-HSOP

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

HP8M31