HP8MC5TB1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 10V, 17.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

135pF @ 30V, 850pF @ 30V

Power - Max

3W (Ta), 20W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

N and P-Channel

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)

Rds On (Max) @ Id, Vgs

90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-HSOP

Packaging

Tape & Reel (TR); Cut Tape (CT)