HS8K1TB

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V, 7.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

348pF @ 15V, 429pF @ 15V

Power - Max

2W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 11A (Ta)

Rds On (Max) @ Id, Vgs

14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V

Mounting Type

Surface Mount

Package / Case

8-UDFN Exposed Pad

Supplier Device Package

HSML3030L10

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

HS8K1