HS8MA2TCR1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 10V, 8.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 10V, 365pF @ 10V

Power - Max

2W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

N and P-Channel

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A (Ta), 7A (Ta)

Rds On (Max) @ Id, Vgs

80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

DFN3333-9DC

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

HS8MA2