Component information
HSG1002VE-TL-E
Renesas Electronics Corporation HSG1002VE-TL-E: Bipolar RF Transistors. Package / Case: 4-SMD, Gull Wing. Supplier Device Package: 4-MFPAK.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Obsolete
- Gain
- 8dB ~ 19.5dB
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 5mA, 2V
- Current - Collector (Ic) (Max)
- 35mA
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 3.5V
- Frequency - Transition
- 38GHz
- Noise Figure (dB Typ @ f)
- 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
- Mounting Type
- Surface Mount
- Package / Case
- 4-SMD, Gull Wing
- Supplier Device Package
- 4-MFPAK
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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