HT8MD5HTB1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 10V, 17.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

90pF @ 40V, 720pF @ 40V

Power - Max

2W (Ta), 13W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

N and P-Channel

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta), 9A (Tc), 3A (Ta), 8.5A (Tc)

Rds On (Max) @ Id, Vgs

112mOhm @ 3.5A, 10V, 165mOhm @ 3A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

8-HSMT (3.2x3)

Packaging

Tape & Reel (TR); Cut Tape (CT)