Component information
IAUC60N04S6L030HATMA1
Infineon Technologies IAUC60N04S6L030HATMA1: FET, MOSFET Arrays. Package / Case: 8-PowerVDFN. Supplier Device Package: PG-TDSON-8-56.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- OptiMOS™ 6
- Part Status
- Obsolete
- Vgs(th) (Max) @ Id
- 2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2128pF @ 25V
- Power - Max
- 75W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Half Bridge)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tj)
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 30A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Supplier Device Package
- PG-TDSON-8-56
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- IAUC60
Documentation and references
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