Component information

IAUC60N04S6L045HATMA1

IAUC60N04S6L045HATMA1 component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Vgs(th) (Max) @ Id
2V @ 13µA
Manufacturer
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Series
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds
1136pF @ 25V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Power - Max
52W (Tc)
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Grade
Automotive
Configuration
2 N-Channel (Half Bridge)
Qualification
AEC-Q101
FET Feature
Logic Level Gate
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
40V
Package / Case
8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C
60A (Tj)
Supplier Device Package
PG-TDSON-8-57
Rds On (Max) @ Id, Vgs
4.5mOhm @ 30A, 10V
Base Product Number
IAUC60

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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