Component information

IAUC80N04S6N036ATMA1

Infineon Technologies IAUC80N04S6N036ATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerTDFN. Supplier Device Package: PG-TDSON-8.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
OptiMOS™ 6
Part Status
Active
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1338 pF @ 25 V
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
N-Channel
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
3.68mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
3V @ 18µA
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8
Package / Case
8-PowerTDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
IAUC80

Documentation and references

Manufacturer datasheet ↗

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